Low internal loss GaInNAs laser diode with InGaAs/GaNAs/GaAs barrier

F. Maskuriy*, M. S. Alias, S. M. Mitani, A. A. Manaf

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We investigate the performance of GaInNAs laser diode at room temperature when the InGaAs and GaNAs barrier configuration is applied to the quantum well system in the active region. The simulation software PICS3D is used in this work. By measuring the light versus the current curve, we can extract the differential quantum efficiency, çd and internal quantum efficiency, çi for the laser. The internal loss of the laser is then determined by measuring the slope of the linear fit line to the inverse of external differential quantum efficiency versus cavity length data points. The inverse slope of the efficiency versus cavity length plot shows that the laser exhibits low internal loss of 2.8 cm-1 with çi of 58%. This shows good simulation results of GaInNAs laser diode. Realizing that the actual growth experiments of GaInNAs laser diode which involves the MBE or MOCVD would cost be rather expensive, this simulation approach offers a low cost method of predicting the laser performance of the GaInNAs laser diode.

Original languageEnglish (US)
Pages (from-to)1213-1216
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Issue number10
StatePublished - Oct 2011
Externally publishedYes


  • GaInNAs
  • Long wavelength lasers
  • Quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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