The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2cm-1 in the passive waveguide section has been measured.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Jun 20 2006|
ASJC Scopus subject areas
- Electrical and Electronic Engineering