Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing

Y. Wang; H. S. Djie; B. S. Ooi

doi:10.1049/el:20061270

Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing

Y. Wang^*, H. S. Djie, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2cm^-1 in the passive waveguide section has been measured.

Original language	English (US)
Pages (from-to)	699-701
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	12
DOIs	https://doi.org/10.1049/el:20061270
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20061270

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@article{d4ea192c3dc340e7bd007f39e0faf6b4,

title = "Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing",

abstract = "The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2cm-1 in the passive waveguide section has been measured.",

author = "Y. Wang and Djie, {H. S.} and Ooi, {B. S.}",

year = "2006",

doi = "10.1049/el:20061270",

language = "English (US)",

volume = "42",

pages = "699--701",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "12",

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TY - JOUR

T1 - Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, B. S.

PY - 2006

Y1 - 2006

N2 - The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2cm-1 in the passive waveguide section has been measured.

AB - The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2cm-1 in the passive waveguide section has been measured.

UR - http://www.scopus.com/inward/record.url?scp=33745114471&partnerID=8YFLogxK

U2 - 10.1049/el:20061270

DO - 10.1049/el:20061270

M3 - Article

AN - SCOPUS:33745114471

SN - 0013-5194

VL - 42

SP - 699

EP - 701

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing

Abstract

ASJC Scopus subject areas

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