Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

Chao Shen; John Leonard; Arash Pourhashemi; Hassan M. Oubei; Mohd Sharizal Alias; Tien Khee Ng; Shuji Nakamura; Steven P. DenBaars; James S. Speck; Ahmed Y. Alyamani; Munir M. Eldesouki; Boon S. Ooi

doi:10.1109/IPCon.2015.7323637

Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

Chao Shen, John Leonard, Arash Pourhashemi, Hassan M. Oubei, Mohd Sharizal Alias, Tien Khee Ng, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir M. Eldesouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.

Original language	English (US)
Title of host publication	2015 IEEE Photonics Conference (IPC)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	581-582
Number of pages	2
ISBN (Print)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323637
State	Published - Nov 12 2015

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10.1109/IPCon.2015.7323637

https://repository.kaust.edu.sa/bitstream/10754/583288/1/IPC2015-Chao%20ver4.pdf

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Shen, C., Leonard, J., Pourhashemi, A., Oubei, H. M., Alias, M. S., Ng, T. K., Nakamura, S., DenBaars, S. P., Speck, J. S., Alyamani, A. Y., Eldesouki, M. M., & Ooi, B. S. (2015). Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate. In 2015 IEEE Photonics Conference (IPC) (pp. 581-582). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IPCon.2015.7323637

@inproceedings{4686f8e433274c6fa736a1935cdf6bde,

title = "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate",

abstract = "In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.",

author = "Chao Shen and John Leonard and Arash Pourhashemi and Oubei, {Hassan M.} and Alias, {Mohd Sharizal} and Ng, {Tien Khee} and Shuji Nakamura and DenBaars, {Steven P.} and Speck, {James S.} and Alyamani, {Ahmed Y.} and Eldesouki, {Munir M.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2015",

month = nov,

day = "12",

doi = "10.1109/IPCon.2015.7323637",

language = "English (US)",

isbn = "9781479974658",

pages = "581--582",

booktitle = "2015 IEEE Photonics Conference (IPC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Shen, C, Leonard, J, Pourhashemi, A, Oubei, HM, Alias, MS, Ng, TK, Nakamura, S, DenBaars, SP, Speck, JS, Alyamani, AY, Eldesouki, MM & Ooi, BS 2015, Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate. in 2015 IEEE Photonics Conference (IPC). Institute of Electrical and Electronics Engineers (IEEE), pp. 581-582. https://doi.org/10.1109/IPCon.2015.7323637

TY - GEN

T1 - Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

AU - Shen, Chao

AU - Leonard, John

AU - Pourhashemi, Arash

AU - Oubei, Hassan M.

AU - Alias, Mohd Sharizal

AU - Ng, Tien Khee

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Speck, James S.

AU - Alyamani, Ahmed Y.

AU - Eldesouki, Munir M.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/11/12

Y1 - 2015/11/12

N2 - In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.

AB - In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.

UR - http://hdl.handle.net/10754/583288

UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7323637

UR - http://www.scopus.com/inward/record.url?scp=84964843740&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2015.7323637

DO - 10.1109/IPCon.2015.7323637

M3 - Conference contribution

SN - 9781479974658

SP - 581

EP - 582

BT - 2015 IEEE Photonics Conference (IPC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

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