@inproceedings{2910132c46624121a802679f2db55405,
title = "Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics",
abstract = "A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (∼80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.",
keywords = "ALD, T-RRAM, a-TiO",
author = "Huang, {Yi Jen} and Shih, {I. Chung} and Chao, {Shih Chun} and Wen, {Cheng Yen} and He, {Jr Hau} and Lee, {Si Chen}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",
year = "2016",
month = apr,
day = "26",
doi = "10.1109/INEC.2014.7460426",
language = "English (US)",
series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",
address = "United States",
}