Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Yating Wan, John E. Bowers, Chen Shang, Justin Norman, Bei Shi, Qiang Li, Noelle Collins, Mario Dumont, Kei May Lau, Arthur C. Gossard

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 107 cm-2. Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.
Original languageEnglish (US)
JournalIEEE Journal of Selected Topics in Quantum Electronics
StatePublished - Mar 1 2020
Externally publishedYes


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