Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Yating Wan; John E. Bowers; Chen Shang; Justin Norman; Bei Shi; Qiang Li; Noelle Collins; Mario Dumont; Kei May Lau; Arthur C. Gossard

doi:10.1109/JSTQE.2020.2964381

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Yating Wan, John E. Bowers, Chen Shang, Justin Norman, Bei Shi, Qiang Li, Noelle Collins, Mario Dumont, Kei May Lau, Arthur C. Gossard

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 107 cm-2. Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

Original language	English (US)
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	26
DOIs	https://doi.org/10.1109/JSTQE.2020.2964381
State	Published - Mar 1 2020
Externally published	Yes

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title = "Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si",

abstract = "We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 107 cm-2. Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.",

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T1 - Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

AU - Wan, Yating

AU - Bowers, John E.

AU - Shang, Chen

AU - Norman, Justin

AU - Shi, Bei

AU - Li, Qiang

AU - Collins, Noelle

AU - Dumont, Mario

AU - Lau, Kei May

AU - Gossard, Arthur C.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2020/3/1

Y1 - 2020/3/1

N2 - We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 107 cm-2. Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

AB - We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 107 cm-2. Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

UR - https://ieeexplore.ieee.org/document/8950397/

UR - http://www.scopus.com/inward/record.url?scp=85079788001&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2020.2964381

DO - 10.1109/JSTQE.2020.2964381

M3 - Article

SN - 1558-4542

VL - 26

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

ER -

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

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