Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%-60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2/Vs are realized at -4 V operation, and unipolar inverters operating at -6 V are demonstrated.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Jun 1 2015|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)