Abstract
Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%-60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2/Vs are realized at -4 V operation, and unipolar inverters operating at -6 V are demonstrated.
Original language | English (US) |
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Article number | 223304 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 22 |
DOIs | |
State | Published - Jun 1 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)