Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry; Kornelius Tetzner; Yen Hung Lin; Sungho Nam; Christopher Pearson; Chris Groves; Michael C. Petty; Thomas D. Anthopoulos; Donal D.C. Bradley

doi:10.1021/acsami.8b06031

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry^*, Kornelius Tetzner, Yen Hung Lin, Sungho Nam, Christopher Pearson, Chris Groves, Michael C. Petty, Thomas D. Anthopoulos, Donal D.C. Bradley

^*Corresponding author for this work

Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO_x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In₂O₃/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm²/(V s)) with appreciable current on/off ratios (≈10³) and an external quantum efficiency of 2 × 10^-2% at 700 cd/m². The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Original language	English (US)
Pages (from-to)	18445-18449
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	22
DOIs	https://doi.org/10.1021/acsami.8b06031
State	Published - Jun 6 2018

Keywords

hybrid transistors
light-emitting transistors
low-voltage
metal oxide high-k dielectric
solution-processed organic semiconductors

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.8b06031

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title = "Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors",

abstract = "We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer {"}Super Yellow{"} acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.",

keywords = "hybrid transistors, light-emitting transistors, low-voltage, metal oxide high-k dielectric, solution-processed organic semiconductors",

author = "Chaudhry, {Mujeeb Ullah} and Kornelius Tetzner and Lin, {Yen Hung} and Sungho Nam and Christopher Pearson and Chris Groves and Petty, {Michael C.} and Anthopoulos, {Thomas D.} and Bradley, {Donal D.C.}",

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year = "2018",

month = jun,

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doi = "10.1021/acsami.8b06031",

language = "English (US)",

volume = "10",

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journal = "ACS Applied Materials and Interfaces",

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T1 - Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

AU - Chaudhry, Mujeeb Ullah

AU - Tetzner, Kornelius

AU - Lin, Yen Hung

AU - Nam, Sungho

AU - Pearson, Christopher

AU - Groves, Chris

AU - Petty, Michael C.

AU - Anthopoulos, Thomas D.

AU - Bradley, Donal D.C.

PY - 2018/6/6

Y1 - 2018/6/6

N2 - We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

AB - We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

KW - hybrid transistors

KW - light-emitting transistors

KW - low-voltage

KW - metal oxide high-k dielectric

KW - solution-processed organic semiconductors

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U2 - 10.1021/acsami.8b06031

DO - 10.1021/acsami.8b06031

M3 - Article

AN - SCOPUS:85047387017

SN - 1944-8244

VL - 10

SP - 18445

EP - 18449

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 22

ER -

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Abstract

Keywords

ASJC Scopus subject areas

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