Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering

A. Saher Helmy; B. S. Ooi; F. Camacho; A. C. Bryce; J. S. Aitchison; R. M. de la Rue; J. H. Marsh

Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering

A. Saher Helmy^*, B. S. Ooi, F. Camacho, A. C. Bryce, J. S. Aitchison, R. M. de la Rue, J. H. Marsh

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

A Mach-Zehnder interferometer was realized in GaAs/AlGaAs double quantum well (DQW) p-1-n semiconductor structure, integrated with Fabry-Perot lasers on the same chip. The laser facet on the modulator side was etched facet. The modulator was tested using a Ti:sapphire laser at different wavelengths. Away from the bandgap, a figure of merit of 75°.V^-1.mm^-1 was obtained. Closer to the modulator bandgap, the switching contrast was around 1 dB.

Original language	English (US)
Pages	19
Number of pages	1
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: Sep 14 1998 → Sep 18 1998

Other

Other	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
City	Glasgow, Scotland
Period	09/14/98 → 09/18/98

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Helmy, A. S., Ooi, B. S., Camacho, F., Bryce, A. C., Aitchison, J. S., de la Rue, R. M., & Marsh, J. H. (1998). Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering. 19. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland.

@conference{f96b96c149c9443694d7406519788569,

title = "Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering",

abstract = "A Mach-Zehnder interferometer was realized in GaAs/AlGaAs double quantum well (DQW) p-1-n semiconductor structure, integrated with Fabry-Perot lasers on the same chip. The laser facet on the modulator side was etched facet. The modulator was tested using a Ti:sapphire laser at different wavelengths. Away from the bandgap, a figure of merit of 75°.V-1.mm-1 was obtained. Closer to the modulator bandgap, the switching contrast was around 1 dB.",

author = "Helmy, {A. Saher} and Ooi, {B. S.} and F. Camacho and Bryce, {A. C.} and Aitchison, {J. S.} and {de la Rue}, {R. M.} and Marsh, {J. H.}",

year = "1998",

language = "English (US)",

pages = "19",

note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

}

Helmy, AS, Ooi, BS, Camacho, F, Bryce, AC, Aitchison, JS, de la Rue, RM & Marsh, JH 1998, 'Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering', Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, 09/14/98 - 09/18/98 pp. 19.

Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering. / Helmy, A. Saher; Ooi, B. S.; Camacho, F. et al.
1998. 19 Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering

AU - Helmy, A. Saher

AU - Ooi, B. S.

AU - Camacho, F.

AU - Bryce, A. C.

AU - Aitchison, J. S.

AU - de la Rue, R. M.

AU - Marsh, J. H.

PY - 1998

Y1 - 1998

N2 - A Mach-Zehnder interferometer was realized in GaAs/AlGaAs double quantum well (DQW) p-1-n semiconductor structure, integrated with Fabry-Perot lasers on the same chip. The laser facet on the modulator side was etched facet. The modulator was tested using a Ti:sapphire laser at different wavelengths. Away from the bandgap, a figure of merit of 75°.V-1.mm-1 was obtained. Closer to the modulator bandgap, the switching contrast was around 1 dB.

AB - A Mach-Zehnder interferometer was realized in GaAs/AlGaAs double quantum well (DQW) p-1-n semiconductor structure, integrated with Fabry-Perot lasers on the same chip. The laser facet on the modulator side was etched facet. The modulator was tested using a Ti:sapphire laser at different wavelengths. Away from the bandgap, a figure of merit of 75°.V-1.mm-1 was obtained. Closer to the modulator bandgap, the switching contrast was around 1 dB.

UR - http://www.scopus.com/inward/record.url?scp=0031624773&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031624773

SP - 19

T2 - Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98

Y2 - 14 September 1998 through 18 September 1998

ER -

Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering

Abstract

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ASJC Scopus subject areas

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