TY - JOUR
T1 - Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films
AU - Duan, Xiaofei
AU - Mi, Wenbo
AU - Guo, Zaibing
AU - Bai, Haili
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).
PY - 2012/5
Y1 - 2012/5
N2 - Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
AB - Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
UR - http://hdl.handle.net/10754/562169
UR - https://linkinghub.elsevier.com/retrieve/pii/S1359645412002339
UR - http://www.scopus.com/inward/record.url?scp=84860267082&partnerID=8YFLogxK
U2 - 10.1016/j.actamat.2012.03.043
DO - 10.1016/j.actamat.2012.03.043
M3 - Article
SN - 1359-6454
VL - 60
SP - 3690
EP - 3697
JO - Acta Materialia
JF - Acta Materialia
IS - 9
ER -