Magnetic and transport properties of Ge: MMMn granular system

Hongliang Li; Yihong Wu; Tie Liu; Shijie Wang; Zaibing Guo; Thomas Osipowicz

doi:10.1016/j.tsf.2005.10.038

Magnetic and transport properties of Ge: MMMn granular system

Hongliang Li, Yihong Wu^*, Tie Liu, Shijie Wang, Zaibing Guo, Thomas Osipowicz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Ge : Mn granular thin films were fabricated on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy and Raman study showed that the sample has a granular structure consisting of GeMn crystallites in a Ge polycrystalline host matrix. A Curie temperature of ∼ 300 K was observed in the magnetization measurement, suggesting that the granules are Mn₅Ge₃. The granular nature of the material was also revealed clearly in the differential conductance vs. bias voltage curves. The unique conductance versus bias voltage curve suggests that the electrical transport is determined by Schottky barriers at the nanoparticle/host matrix interface. This type of material might be useful for studying spin-injections from metallic magnetic nanostructures to semiconductors.

Original language	English (US)
Pages (from-to)	54-56
Number of pages	3
Journal	Thin Solid Films
Volume	505
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.10.038
State	Published - May 18 2006

Keywords

Diluted magnetic semiconductors (DMSs)
Granular systems
Localization
Schottky barrier

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{9aecee470b874e60845809d1a312a9d8,

title = "Magnetic and transport properties of Ge: MMMn granular system",

abstract = "Ge : Mn granular thin films were fabricated on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy and Raman study showed that the sample has a granular structure consisting of GeMn crystallites in a Ge polycrystalline host matrix. A Curie temperature of ∼ 300 K was observed in the magnetization measurement, suggesting that the granules are Mn5Ge3. The granular nature of the material was also revealed clearly in the differential conductance vs. bias voltage curves. The unique conductance versus bias voltage curve suggests that the electrical transport is determined by Schottky barriers at the nanoparticle/host matrix interface. This type of material might be useful for studying spin-injections from metallic magnetic nanostructures to semiconductors.",

keywords = "Diluted magnetic semiconductors (DMSs), Granular systems, Localization, Schottky barrier",

author = "Hongliang Li and Yihong Wu and Tie Liu and Shijie Wang and Zaibing Guo and Thomas Osipowicz",

year = "2006",

month = may,

day = "18",

doi = "10.1016/j.tsf.2005.10.038",

language = "English (US)",

volume = "505",

pages = "54--56",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Magnetic and transport properties of Ge

T2 - MMMn granular system

AU - Li, Hongliang

AU - Wu, Yihong

AU - Liu, Tie

AU - Wang, Shijie

AU - Guo, Zaibing

AU - Osipowicz, Thomas

PY - 2006/5/18

Y1 - 2006/5/18

N2 - Ge : Mn granular thin films were fabricated on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy and Raman study showed that the sample has a granular structure consisting of GeMn crystallites in a Ge polycrystalline host matrix. A Curie temperature of ∼ 300 K was observed in the magnetization measurement, suggesting that the granules are Mn5Ge3. The granular nature of the material was also revealed clearly in the differential conductance vs. bias voltage curves. The unique conductance versus bias voltage curve suggests that the electrical transport is determined by Schottky barriers at the nanoparticle/host matrix interface. This type of material might be useful for studying spin-injections from metallic magnetic nanostructures to semiconductors.

AB - Ge : Mn granular thin films were fabricated on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy and Raman study showed that the sample has a granular structure consisting of GeMn crystallites in a Ge polycrystalline host matrix. A Curie temperature of ∼ 300 K was observed in the magnetization measurement, suggesting that the granules are Mn5Ge3. The granular nature of the material was also revealed clearly in the differential conductance vs. bias voltage curves. The unique conductance versus bias voltage curve suggests that the electrical transport is determined by Schottky barriers at the nanoparticle/host matrix interface. This type of material might be useful for studying spin-injections from metallic magnetic nanostructures to semiconductors.

KW - Diluted magnetic semiconductors (DMSs)

KW - Granular systems

KW - Localization

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=33644896533&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.10.038

DO - 10.1016/j.tsf.2005.10.038

M3 - Article

AN - SCOPUS:33644896533

SN - 0040-6090

VL - 505

SP - 54

EP - 56

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Magnetic and transport properties of Ge: MMMn granular system

Abstract

Keywords

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