Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Z. B. Guo; K. B. Li; G. C. Han; Z. Y. Liu; P. Luo; Y. H. Wu

doi:10.1109/INTMAG.2002.1001208

Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Z. B. Guo^*, K. B. Li, G. C. Han, Z. Y. Liu, P. Luo, Y. H. Wu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Recently, much attention has been focused on exchange coupling between a ferromagnetic layer and an antiferromagnetic layer, because of its elusive mechanism and its applications in spin-valve devices. For FeMn(22 nm)/NiFe(20 nm) bilayers, using electron beam lithography and ion beam etching, a wire-like array has been patterned in the FeMn layer by partially etching the FeMn layer. The authors present a scanning electron microscope image and study the magnetic properties of a wire-like array patterned sample.

Original language	English (US)
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001208
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

Publication series

Name	INTERMAG Europe 2002 - IEEE International Magnetics Conference

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	04/28/02 → 05/2/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

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10.1109/INTMAG.2002.1001208

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Guo, Z. B., Li, K. B., Han, G. C., Liu, Z. Y., Luo, P., & Wu, Y. H. (2002). Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1001208 (INTERMAG Europe 2002 - IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001208

Guo, Z. B. ; Li, K. B. ; Han, G. C. et al. / Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

@inproceedings{9e9bb05d8ce1431b9f03a8ea0fc434d1,

title = "Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth",

abstract = "Recently, much attention has been focused on exchange coupling between a ferromagnetic layer and an antiferromagnetic layer, because of its elusive mechanism and its applications in spin-valve devices. For FeMn(22 nm)/NiFe(20 nm) bilayers, using electron beam lithography and ion beam etching, a wire-like array has been patterned in the FeMn layer by partially etching the FeMn layer. The authors present a scanning electron microscope image and study the magnetic properties of a wire-like array patterned sample.",

author = "Guo, {Z. B.} and Li, {K. B.} and Han, {G. C.} and Liu, {Z. Y.} and P. Luo and Wu, {Y. H.}",

note = "Publisher Copyright: {\textcopyright}2002 IEEE.; 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2002",

doi = "10.1109/INTMAG.2002.1001208",

language = "English (US)",

series = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and {Vazquez Villalabeitia}, M. and Bain, {J. A.} and {De Boeck}, Jo and R. Wood",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

address = "United States",

}

Guo, ZB, Li, KB, Han, GC, Liu, ZY, Luo, P & Wu, YH 2002, Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001208, INTERMAG Europe 2002 - IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 04/28/02. https://doi.org/10.1109/INTMAG.2002.1001208

Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. / Guo, Z. B.; Li, K. B.; Han, G. C. et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. 1001208 (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

AU - Guo, Z. B.

AU - Li, K. B.

AU - Han, G. C.

AU - Liu, Z. Y.

AU - Luo, P.

AU - Wu, Y. H.

PY - 2002

Y1 - 2002

N2 - Recently, much attention has been focused on exchange coupling between a ferromagnetic layer and an antiferromagnetic layer, because of its elusive mechanism and its applications in spin-valve devices. For FeMn(22 nm)/NiFe(20 nm) bilayers, using electron beam lithography and ion beam etching, a wire-like array has been patterned in the FeMn layer by partially etching the FeMn layer. The authors present a scanning electron microscope image and study the magnetic properties of a wire-like array patterned sample.

AB - Recently, much attention has been focused on exchange coupling between a ferromagnetic layer and an antiferromagnetic layer, because of its elusive mechanism and its applications in spin-valve devices. For FeMn(22 nm)/NiFe(20 nm) bilayers, using electron beam lithography and ion beam etching, a wire-like array has been patterned in the FeMn layer by partially etching the FeMn layer. The authors present a scanning electron microscope image and study the magnetic properties of a wire-like array patterned sample.

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DO - 10.1109/INTMAG.2002.1001208

M3 - Conference contribution

AN - SCOPUS:85017258685

T3 - INTERMAG Europe 2002 - IEEE International Magnetics Conference

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

A2 - Fidler, J.

A2 - Hillebrands, B.

A2 - Ross, C.

A2 - Weller, D.

A2 - Folks, L.

A2 - Hill, E.

A2 - Vazquez Villalabeitia, M.

A2 - Bain, J. A.

A2 - De Boeck, Jo

A2 - Wood, R.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

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Guo ZB, Li KB, Han GC, Liu ZY, Luo P, Wu YH. Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2002. 1001208. (INTERMAG Europe 2002 - IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2002.1001208

Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

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