Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Zai Bing Guo; K. B. Li; G. C. Han; Z. Y. Liu; P. Luo; Y. H. Wu

Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Zai Bing Guo^*, K. B. Li, G. C. Han, Z. Y. Liu, P. Luo, Y. H. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.

Original language	English (US)
Pages (from-to)	ET10
Journal	Digests of the Intermag Conference
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{9bb36f176f6240d0a4cc23b6f969197c,

title = "Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth",

abstract = "Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.",

author = "Guo, {Zai Bing} and Li, {K. B.} and Han, {G. C.} and Liu, {Z. Y.} and P. Luo and Wu, {Y. H.}",

year = "2002",

language = "English (US)",

pages = "ET10",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - JOUR

T1 - Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

AU - Guo, Zai Bing

AU - Li, K. B.

AU - Han, G. C.

AU - Liu, Z. Y.

AU - Luo, P.

AU - Wu, Y. H.

PY - 2002

Y1 - 2002

N2 - Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.

AB - Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.

UR - http://www.scopus.com/inward/record.url?scp=18244426910&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:18244426910

SN - 0074-6843

SP - ET10

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG

Y2 - 28 April 2002 through 2 May 2002

ER -

Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Abstract

ASJC Scopus subject areas

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