Magnetic properties of Ni1-xMnxO diluted magnetic semiconductor

Chao Wang; Dexiong Hong; Xiaoyu Yang; Mingliang Fang; Liang Cai; Ling Chen; Wensheng Yan

doi:10.3969/j.issn.0253.2014.08.006

Magnetic properties of Ni_1-xMn_xO diluted magnetic semiconductor

Chao Wang^*, Dexiong Hong, Xiaoyu Yang, Mingliang Fang, Liang Cai, Ling Chen, Wensheng Yan

^*Corresponding author for this work

KAUST Solar Center

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructural and magnetic properties of Ni_1-xMn_xO(0. 01≤x≤0.05) thin films prepared by pulsed laser deposition (PLD) were studied by combining X-ray absorption near edge structure (XANES) spectroscopy, superconducting quantum interference device (SQUID) and first-principles calculations. XANES results at Mn K-edge show that at the low Mn doping level of x≤0. 03, the Mn ions in the mixed oxidation valence state (+ 2/ +3) are incorporated substitutionally into the NiO host, while at higher doping level of x>0. 03 Mn₂O₃-like impurity phase is formed. Magnetization measurements indicate that the saturation magnetic moment of Ni_1-xMn_xO film increases from 0. 3 to 0. 45 μB/Mn as the Mn content rises from 0. 01 to 0. 03. It is proposed that interactions between Mn³⁺ ions mediated by Ni vacancies exhibit ferromagnetic coupling, while interactions between Mn²⁺ ions exhibit antiferromagnetic coupling through superexchange interaction.

Original language	Chinese (Traditional)
Pages (from-to)	667-671
Number of pages	5
Journal	Journal of University of Science and Technology of China
Volume	44
Issue number	8
DOIs	https://doi.org/10.3969/j.issn.0253.2014.08.006
State	Published - 2014

Keywords

Mn-doped NiO
Room temperature ferromagnetism
XAFS

ASJC Scopus subject areas

Mechanical Engineering

Access to Document

10.3969/j.issn.0253.2014.08.006

Cite this

@article{0857cbf9fdcf4f9da533c7d1b65f1ce0,

title = "Magnetic properties of Ni1-xMnxO diluted magnetic semiconductor",

abstract = "The microstructural and magnetic properties of Ni1-xMnxO(0. 01≤x≤0.05) thin films prepared by pulsed laser deposition (PLD) were studied by combining X-ray absorption near edge structure (XANES) spectroscopy, superconducting quantum interference device (SQUID) and first-principles calculations. XANES results at Mn K-edge show that at the low Mn doping level of x≤0. 03, the Mn ions in the mixed oxidation valence state (+ 2/ +3) are incorporated substitutionally into the NiO host, while at higher doping level of x>0. 03 Mn2O3-like impurity phase is formed. Magnetization measurements indicate that the saturation magnetic moment of Ni1-xMnxO film increases from 0. 3 to 0. 45 μB/Mn as the Mn content rises from 0. 01 to 0. 03. It is proposed that interactions between Mn3+ ions mediated by Ni vacancies exhibit ferromagnetic coupling, while interactions between Mn2+ ions exhibit antiferromagnetic coupling through superexchange interaction.",

keywords = "Mn-doped NiO, Room temperature ferromagnetism, XAFS",

author = "Chao Wang and Dexiong Hong and Xiaoyu Yang and Mingliang Fang and Liang Cai and Ling Chen and Wensheng Yan",

year = "2014",

doi = "10.3969/j.issn.0253.2014.08.006",

language = "Chinese (Traditional)",

volume = "44",

pages = "667--671",

journal = "Journal of University of Science and Technology of China",

issn = "0253-2778",

publisher = "China University of Science and Technology",

number = "8",

}

TY - JOUR

T1 - Magnetic properties of Ni1-xMnxO diluted magnetic semiconductor

AU - Wang, Chao

AU - Hong, Dexiong

AU - Yang, Xiaoyu

AU - Fang, Mingliang

AU - Cai, Liang

AU - Chen, Ling

AU - Yan, Wensheng

PY - 2014

Y1 - 2014

N2 - The microstructural and magnetic properties of Ni1-xMnxO(0. 01≤x≤0.05) thin films prepared by pulsed laser deposition (PLD) were studied by combining X-ray absorption near edge structure (XANES) spectroscopy, superconducting quantum interference device (SQUID) and first-principles calculations. XANES results at Mn K-edge show that at the low Mn doping level of x≤0. 03, the Mn ions in the mixed oxidation valence state (+ 2/ +3) are incorporated substitutionally into the NiO host, while at higher doping level of x>0. 03 Mn2O3-like impurity phase is formed. Magnetization measurements indicate that the saturation magnetic moment of Ni1-xMnxO film increases from 0. 3 to 0. 45 μB/Mn as the Mn content rises from 0. 01 to 0. 03. It is proposed that interactions between Mn3+ ions mediated by Ni vacancies exhibit ferromagnetic coupling, while interactions between Mn2+ ions exhibit antiferromagnetic coupling through superexchange interaction.

AB - The microstructural and magnetic properties of Ni1-xMnxO(0. 01≤x≤0.05) thin films prepared by pulsed laser deposition (PLD) were studied by combining X-ray absorption near edge structure (XANES) spectroscopy, superconducting quantum interference device (SQUID) and first-principles calculations. XANES results at Mn K-edge show that at the low Mn doping level of x≤0. 03, the Mn ions in the mixed oxidation valence state (+ 2/ +3) are incorporated substitutionally into the NiO host, while at higher doping level of x>0. 03 Mn2O3-like impurity phase is formed. Magnetization measurements indicate that the saturation magnetic moment of Ni1-xMnxO film increases from 0. 3 to 0. 45 μB/Mn as the Mn content rises from 0. 01 to 0. 03. It is proposed that interactions between Mn3+ ions mediated by Ni vacancies exhibit ferromagnetic coupling, while interactions between Mn2+ ions exhibit antiferromagnetic coupling through superexchange interaction.

KW - Mn-doped NiO

KW - Room temperature ferromagnetism

KW - XAFS

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