Magnetic property and magnetoresistance in Fe/ITO multilayers

Tian Yu; Xing Qing Li; Ding Guo Li; Shen Fen Hao; Liang Min Wang; Zhao Gang Zhang; G. H. Wu; X. X. Zhang; Qi Ling Li; Peng Chen

doi:10.1016/j.jmmm.2008.03.044

Magnetic property and magnetoresistance in Fe/ITO multilayers

Tian Yu, Xing Qing Li, Ding Guo Li, Shen Fen Hao, Liang Min Wang, Zhao Gang Zhang, G. H. Wu, X. X. Zhang, Qi Ling Li, Peng Chen^*

^*Corresponding author for this work

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Abstract

Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50 K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5 K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.

Original language	English (US)
Pages (from-to)	2185-2189
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	320
Issue number	17
DOIs	https://doi.org/10.1016/j.jmmm.2008.03.044
State	Published - Sep 2008

Keywords

Ferromagnetic metal-semiconductor
Giant magnetoresistance
Magnetic properties
Multilayer film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2008.03.044

Cite this

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title = "Magnetic property and magnetoresistance in Fe/ITO multilayers",

abstract = "Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50 K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5 K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.",

keywords = "Ferromagnetic metal-semiconductor, Giant magnetoresistance, Magnetic properties, Multilayer film",

author = "Tian Yu and Li, {Xing Qing} and Li, {Ding Guo} and Hao, {Shen Fen} and Wang, {Liang Min} and Zhang, {Zhao Gang} and Wu, {G. H.} and Zhang, {X. X.} and Li, {Qi Ling} and Peng Chen",

year = "2008",

month = sep,

doi = "10.1016/j.jmmm.2008.03.044",

language = "English (US)",

volume = "320",

pages = "2185--2189",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "17",

}

TY - JOUR

T1 - Magnetic property and magnetoresistance in Fe/ITO multilayers

AU - Yu, Tian

AU - Li, Xing Qing

AU - Li, Ding Guo

AU - Hao, Shen Fen

AU - Wang, Liang Min

AU - Zhang, Zhao Gang

AU - Wu, G. H.

AU - Zhang, X. X.

AU - Li, Qi Ling

AU - Chen, Peng

PY - 2008/9

Y1 - 2008/9

N2 - Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50 K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5 K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.

AB - Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50 K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5 K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.

KW - Ferromagnetic metal-semiconductor

KW - Giant magnetoresistance

KW - Magnetic properties

KW - Multilayer film

UR - http://www.scopus.com/inward/record.url?scp=44549088302&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2008.03.044

DO - 10.1016/j.jmmm.2008.03.044

M3 - Article

AN - SCOPUS:44549088302

SN - 0304-8853

VL - 320

SP - 2185

EP - 2189

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 17

ER -

Magnetic property and magnetoresistance in Fe/ITO multilayers

Abstract

Keywords

ASJC Scopus subject areas

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