Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

Kun-Hua Tu; Eduardo Fernandez Martin; hamid almasi; Weigang Wang; David Navas Otero; Konstantinos Ntetsikas; Dimitrios Moschovas; Apostolos Avgeropoulos; Caroline A Ross

doi:10.1088/1361-6528/aabce8

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

Kun-Hua Tu, Eduardo Fernandez Martin, hamid almasi, Weigang Wang, David Navas Otero, Konstantinos Ntetsikas, Dimitrios Moschovas, Apostolos Avgeropoulos, Caroline A Ross

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

Original language	English (US)
Pages (from-to)	275302
Journal	Nanotechnology
Volume	29
Issue number	27
DOIs	https://doi.org/10.1088/1361-6528/aabce8
State	Published - May 8 2018
Externally published	Yes

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10.1088/1361-6528/aabce8

https://repository.kaust.edu.sa/bitstream/10754/627522/1/Tu%2bet%2bal_2018_Nanotechnology_10.1088_1361-6528_aabce8.pdf

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@article{61316fdc959c415a8955f09aedd69e58,

title = "Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography",

abstract = "Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.",

author = "Kun-Hua Tu and {Fernandez Martin}, Eduardo and hamid almasi and Weigang Wang and {Navas Otero}, David and Konstantinos Ntetsikas and Dimitrios Moschovas and Apostolos Avgeropoulos and Ross, {Caroline A}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: C-SPIN, a STARnet Center of DARPA and MARCO",

year = "2018",

month = may,

day = "8",

doi = "10.1088/1361-6528/aabce8",

language = "English (US)",

volume = "29",

pages = "275302",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "27",

}

TY - JOUR

T1 - Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

AU - Tu, Kun-Hua

AU - Fernandez Martin, Eduardo

AU - almasi, hamid

AU - Wang, Weigang

AU - Navas Otero, David

AU - Ntetsikas, Konstantinos

AU - Moschovas, Dimitrios

AU - Avgeropoulos, Apostolos

AU - Ross, Caroline A

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: C-SPIN, a STARnet Center of DARPA and MARCO

PY - 2018/5/8

Y1 - 2018/5/8

N2 - Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

AB - Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

UR - http://hdl.handle.net/10754/627522

UR - http://iopscience.iop.org/article/10.1088/1361-6528/aabce8

UR - http://www.scopus.com/inward/record.url?scp=85048235525&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aabce8

DO - 10.1088/1361-6528/aabce8

M3 - Article

C2 - 29633719

SN - 0957-4484

VL - 29

SP - 275302

JO - Nanotechnology

JF - Nanotechnology

IS - 27

ER -

Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

Abstract

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