TY - JOUR
T1 - Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography
AU - Tu, Kun-Hua
AU - Fernandez Martin, Eduardo
AU - almasi, hamid
AU - Wang, Weigang
AU - Navas Otero, David
AU - Ntetsikas, Konstantinos
AU - Moschovas, Dimitrios
AU - Avgeropoulos, Apostolos
AU - Ross, Caroline A
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: C-SPIN, a STARnet Center of DARPA and MARCO
PY - 2018/5/8
Y1 - 2018/5/8
N2 - Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.
AB - Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.
UR - http://hdl.handle.net/10754/627522
UR - http://iopscience.iop.org/article/10.1088/1361-6528/aabce8
UR - http://www.scopus.com/inward/record.url?scp=85048235525&partnerID=8YFLogxK
U2 - 10.1088/1361-6528/aabce8
DO - 10.1088/1361-6528/aabce8
M3 - Article
C2 - 29633719
SN - 0957-4484
VL - 29
SP - 275302
JO - Nanotechnology
JF - Nanotechnology
IS - 27
ER -