Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Xiaofei Duan; Wenbo Mi; Zaibing Guo; Haili Bai

doi:10.1016/j.tsf.2013.06.068

Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Xiaofei Duan, Wenbo Mi, Zaibing Guo, Haili Bai

Imaging & Characterization Core Lab

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	348-354
Number of pages	7
Journal	Thin Solid Films
Volume	542
DOIs	https://doi.org/10.1016/j.tsf.2013.06.068
State	Published - Sep 2013

ASJC Scopus subject areas

Materials Chemistry
Surfaces and Interfaces
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Metals and Alloys

Access to Document

10.1016/j.tsf.2013.06.068

Cite this

@article{404374bc9d584013b9f6c4da2d872617,

title = "Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films",

abstract = "The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. {\textcopyright} 2013 Elsevier B.V. All rights reserved.",

author = "Xiaofei Duan and Wenbo Mi and Zaibing Guo and Haili Bai",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).",

year = "2013",

month = sep,

doi = "10.1016/j.tsf.2013.06.068",

language = "English (US)",

volume = "542",

pages = "348--354",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

AU - Duan, Xiaofei

AU - Mi, Wenbo

AU - Guo, Zaibing

AU - Bai, Haili

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).

PY - 2013/9

Y1 - 2013/9

N2 - The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

AB - The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

UR - http://hdl.handle.net/10754/562934

UR - https://linkinghub.elsevier.com/retrieve/pii/S0040609013011206

UR - http://www.scopus.com/inward/record.url?scp=84881311534&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.06.068

DO - 10.1016/j.tsf.2013.06.068

M3 - Article

SN - 0040-6090

VL - 542

SP - 348

EP - 354

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this