Magnetoresistance in exchange-biased IRMN/NIFE/FEMN

Zai Bing Guo*, J. J. Qiu, Y. K. Zheng, G. C. Han, K. B. Li, P. Luo, Y. H. Wu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.

Original languageEnglish (US)
Pages (from-to)ES10
JournalDigests of the Intermag Conference
StatePublished - 2002
Externally publishedYes
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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