@inproceedings{83d75f2b3b9e4357b1b6f40b6f17e76b,
title = "Magnetoresistance in exchange-biased IrMn/NiFe/FeMn",
abstract = "Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.",
author = "Guo, {Z. B.} and Qiu, {J. J.} and Zheng, {Y. K.} and Han, {G. C.} and Li, {K. B.} and P. Luo and Wu, {Y. H.}",
note = "Publisher Copyright: {\textcopyright}2002 IEEE.; 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",
year = "2002",
doi = "10.1109/INTMAG.2002.1001196",
language = "English (US)",
series = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and {Vazquez Villalabeitia}, M. and Bain, {J. A.} and {De Boeck}, Jo and R. Wood",
booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",
address = "United States",
}