Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates
Y. El Gmili, P. L. Bonanno, S. Sundaram, X. Li, R. Puybaret, G. Patriarche, C. Pradalier, J. Decobert, P. L. Voss, J. P. Salvestrini, A. Ougazzaden*
Dive into the research topics of 'Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates'. Together they form a unique fingerprint.