Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

J. P. Black; C. J. W. Breward; P. D. Howell; R. J. S. Young

doi:10.1137/130911974

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

J. P. Black, C. J. W. Breward, P. D. Howell, R. J. S. Young

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

Original language	English (US)
Pages (from-to)	1906-1925
Number of pages	20
Journal	SIAM Journal on Applied Mathematics
Volume	73
Issue number	5
DOIs	https://doi.org/10.1137/130911974
State	Published - Oct 22 2013
Externally published	Yes

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10.1137/130911974

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@article{e4b343f811904b9895e28ddb91c76ab2,

title = "Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells",

abstract = "In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. {\textcopyright} 2013 Society for Industrial and Applied Mathematics.",

author = "Black, {J. P.} and Breward, {C. J. W.} and Howell, {P. D.} and Young, {R. J. S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUK-C1-013-04 Acknowledgements: Received by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2013",

month = oct,

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doi = "10.1137/130911974",

language = "English (US)",

volume = "73",

pages = "1906--1925",

journal = "SIAM Journal on Applied Mathematics",

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publisher = "Society for Industrial and Applied Mathematics",

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TY - JOUR

T1 - Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

AU - Black, J. P.

AU - Breward, C. J. W.

AU - Howell, P. D.

AU - Young, R. J. S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUK-C1-013-04 Acknowledgements: Received by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2013/10/22

Y1 - 2013/10/22

N2 - In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

AB - In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

UR - http://hdl.handle.net/10754/598770

UR - http://epubs.siam.org/doi/10.1137/130911974

UR - http://www.scopus.com/inward/record.url?scp=84891370472&partnerID=8YFLogxK

U2 - 10.1137/130911974

DO - 10.1137/130911974

M3 - Article

SN - 0036-1399

VL - 73

SP - 1906

EP - 1925

JO - SIAM Journal on Applied Mathematics

JF - SIAM Journal on Applied Mathematics

IS - 5

ER -

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

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