Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

Mohamed T. Ghoneim; Arwa T. Kutbee; Seyed Faizelldin Ghodsi Nasseri; G. Bersuker; Muhammad Mustafa Hussain

doi:10.1063/1.4882647

Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

Mohamed T. Ghoneim, Arwa T. Kutbee, Seyed Faizelldin Ghodsi Nasseri, G. Bersuker, Muhammad Mustafa Hussain

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29 Scopus citations

Abstract

We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

Original language	English (US)
Pages (from-to)	234104
Journal	Applied Physics Letters
Volume	104
Issue number	23
DOIs	https://doi.org/10.1063/1.4882647
State	Published - Jun 9 2014

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10.1063/1.4882647

https://repository.kaust.edu.sa/bitstream/10754/552155/1/1.4882647.pdf

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abstract = "We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.",

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AU - Ghoneim, Mohamed T.

AU - Kutbee, Arwa T.

AU - Ghodsi Nasseri, Seyed Faizelldin

AU - Bersuker, G.

AU - Hussain, Muhammad Mustafa

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PY - 2014/6/9

Y1 - 2014/6/9

N2 - We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

AB - We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

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JO - Applied Physics Letters

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Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

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