Memristor-based relaxation oscillators using digital gates

Moustafa A. Khatib; Mohamed E. Fouda; Ahmed G. Mosad; Khaled N. Salama; Ahmed G. Radwan

doi:10.1109/ICCES.2012.6408491

Memristor-based relaxation oscillators using digital gates

Moustafa A. Khatib, Mohamed E. Fouda, Ahmed G. Mosad, Khaled N. Salama, Ahmed G. Radwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.

Original language	English (US)
Title of host publication	2012 Seventh International Conference on Computer Engineering & Systems (ICCES)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	98-102
Number of pages	5
ISBN (Print)	9781467329613
DOIs	https://doi.org/10.1109/ICCES.2012.6408491
State	Published - Nov 2012

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10.1109/ICCES.2012.6408491

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title = "Memristor-based relaxation oscillators using digital gates",

abstract = "This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. {\textcopyright} 2012 IEEE.",

author = "Khatib, {Moustafa A.} and Fouda, {Mohamed E.} and Mosad, {Ahmed G.} and Salama, {Khaled N.} and Radwan, {Ahmed G.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2012",

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doi = "10.1109/ICCES.2012.6408491",

language = "English (US)",

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T1 - Memristor-based relaxation oscillators using digital gates

AU - Khatib, Moustafa A.

AU - Fouda, Mohamed E.

AU - Mosad, Ahmed G.

AU - Salama, Khaled N.

AU - Radwan, Ahmed G.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/11

Y1 - 2012/11

N2 - This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.

AB - This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.

UR - http://hdl.handle.net/10754/564621

UR - http://ieeexplore.ieee.org/document/6408491/

UR - http://www.scopus.com/inward/record.url?scp=84874104395&partnerID=8YFLogxK

U2 - 10.1109/ICCES.2012.6408491

DO - 10.1109/ICCES.2012.6408491

M3 - Conference contribution

SN - 9781467329613

SP - 98

EP - 102

BT - 2012 Seventh International Conference on Computer Engineering & Systems (ICCES)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Memristor-based relaxation oscillators using digital gates

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