Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Chao Shen; Chun Hong Kang; Tien Khee Ng; Boon S. Ooi

doi:10.1364/ACPC.2013.AW3K.3

Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Chao Shen, Chun Hong Kang, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.

Original language	English (US)
Title of host publication	OSA Technical Digest (online)
Publisher	The Optical Society
ISBN (Print)	978-1- 55752-989-3
DOIs	https://doi.org/10.1364/ACPC.2013.AW3K.3
State	Published - 2013

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10.1364/ACPC.2013.AW3K.3

https://repository.kaust.edu.sa/bitstream/10754/310650/1/ACP-2013-AW3K.3.pdf

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@inproceedings{b25fb55f4e074599980dd68b8accec4d,

title = "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs",

abstract = "The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.",

author = "Chao Shen and Kang, {Chun Hong} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2013",

doi = "10.1364/ACPC.2013.AW3K.3",

language = "English (US)",

isbn = "978-1- 55752-989-3",

booktitle = "OSA Technical Digest (online)",

publisher = "The Optical Society",

address = "United States",

}

TY - GEN

T1 - Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

AU - Shen, Chao

AU - Kang, Chun Hong

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013

Y1 - 2013

N2 - The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.

AB - The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.

UR - http://hdl.handle.net/10754/310650

UR - https://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3

U2 - 10.1364/ACPC.2013.AW3K.3

DO - 10.1364/ACPC.2013.AW3K.3

M3 - Conference contribution

SN - 978-1- 55752-989-3

BT - OSA Technical Digest (online)

PB - The Optical Society

ER -

Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Abstract

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