TY - JOUR
T1 - Metal-free, single-polymer device exhibits resistive memory effect
AU - Bhansali, Unnat Sampatraj
AU - Khan, Yasser
AU - Cha, Dong Kyu
AU - Almadhoun, Mahmoud N.
AU - Li, Ruipeng
AU - Chen, Long
AU - Amassian, Aram
AU - Odeh, Ihab N.
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.
PY - 2013/11/14
Y1 - 2013/11/14
N2 - All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
AB - All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
UR - http://hdl.handle.net/10754/563158
UR - https://pubs.acs.org/doi/10.1021/nn403873c
UR - http://www.scopus.com/inward/record.url?scp=84891368541&partnerID=8YFLogxK
U2 - 10.1021/nn403873c
DO - 10.1021/nn403873c
M3 - Article
C2 - 24206048
SN - 1936-0851
VL - 7
SP - 10518
EP - 10524
JO - ACS Nano
JF - ACS Nano
IS - 12
ER -