Metal gate work function engineering using AlN x interfacial layers

H. N. Alshareef; H. F. Luan; K. Choi; H. R. Harris; H. C. Wen; M. A. Quevedo-Lopez; P. Majhi; B. H. Lee

doi:10.1063/1.2186517

Metal gate work function engineering using AlN _x interfacial layers

H. N. Alshareef^*, H. F. Luan, K. Choi, H. R. Harris, H. C. Wen, M. A. Quevedo-Lopez, P. Majhi, B. H. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

Metal gate work function enhancement using thin AlN _x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN _x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN _x interfacial layer increased when the concentration of SiO ₂ in the gate dielectric was increased. Thus, the enhancement was minimal for HfO ₂ and maximum for SiO ₂. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.

Original language	English (US)
Article number	112114
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2186517
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Metal gate work function engineering using AlN x interfacial layers",

abstract = "Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.",

author = "Alshareef, {H. N.} and Luan, {H. F.} and K. Choi and Harris, {H. R.} and Wen, {H. C.} and Quevedo-Lopez, {M. A.} and P. Majhi and Lee, {B. H.}",

year = "2006",

doi = "10.1063/1.2186517",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

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TY - JOUR

T1 - Metal gate work function engineering using AlN x interfacial layers

AU - Alshareef, H. N.

AU - Luan, H. F.

AU - Choi, K.

AU - Harris, H. R.

AU - Wen, H. C.

AU - Quevedo-Lopez, M. A.

AU - Majhi, P.

AU - Lee, B. H.

PY - 2006

Y1 - 2006

N2 - Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.

AB - Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.

UR - http://www.scopus.com/inward/record.url?scp=33645154999&partnerID=8YFLogxK

U2 - 10.1063/1.2186517

DO - 10.1063/1.2186517

M3 - Article

AN - SCOPUS:33645154999

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112114

ER -

Metal gate work function engineering using AlN _x interfacial layers

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