As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5 of the total contact area. © 2011 American Institute of Physics.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Nov 21 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)