INIS
lasers
100%
substrates
100%
deposition
100%
thin films
100%
epitaxy
100%
temperature effects
100%
single crystals
28%
films
28%
crystals
28%
orientation
28%
high temperature
14%
growth
14%
distribution
14%
shape
14%
size
14%
errors
14%
x-ray diffraction
14%
impurities
14%
raman spectroscopy
14%
raman spectra
14%
transition temperature
14%
temperature measurement
14%
Chemistry
Pulsed Laser Deposition
100%
Liquid Film
100%
Reaction Temperature
100%
Tennessine
42%
Single Crystalline Solid
28%
Epitaxial Growth
28%
Shape
14%
Raman Spectrum
14%
Superconductive Transition Temperature
14%
Micro-Raman Spectroscopy
14%
Domain Boundary
14%
Raman Imaging
14%
Procedure
14%
Analytical Method
14%
Particle Size
14%
Error
14%
Impurity
14%
Material Science
Thin Films
100%
Pulsed Laser Deposition
100%
Temperature
100%
Single Crystal
25%
Epitaxy
25%
Crystal
25%
Impurity
12%