Microdome InGaN-based multiple quantum well solar cells

Cheng Han Ho; Kun Yu Lai; Chin An Lin; Guan Jhong Lin; Meng Kai Hsing; Jr Hau He

doi:10.1063/1.4734380

Microdome InGaN-based multiple quantum well solar cells

Cheng Han Ho, Kun Yu Lai, Chin An Lin, Guan Jhong Lin, Meng Kai Hsing, Jr Hau He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102. The improvements in short-circuit current density (J _sc, from 0.43 to 0.54 mA/cm ²) and fill factor (from 44 to 72) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

Original language	English (US)
Article number	023902
Journal	Applied Physics Letters
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.4734380
State	Published - Jul 9 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4734380

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title = "Microdome InGaN-based multiple quantum well solar cells",

abstract = "InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102. The improvements in short-circuit current density (J sc, from 0.43 to 0.54 mA/cm 2) and fill factor (from 44 to 72) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.",

author = "Ho, {Cheng Han} and Lai, {Kun Yu} and Lin, {Chin An} and Lin, {Guan Jhong} and Hsing, {Meng Kai} and He, {Jr Hau}",

year = "2012",

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day = "9",

doi = "10.1063/1.4734380",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Microdome InGaN-based multiple quantum well solar cells

AU - Ho, Cheng Han

AU - Lai, Kun Yu

AU - Lin, Chin An

AU - Lin, Guan Jhong

AU - Hsing, Meng Kai

AU - He, Jr Hau

PY - 2012/7/9

Y1 - 2012/7/9

N2 - InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102. The improvements in short-circuit current density (J sc, from 0.43 to 0.54 mA/cm 2) and fill factor (from 44 to 72) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

AB - InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102. The improvements in short-circuit current density (J sc, from 0.43 to 0.54 mA/cm 2) and fill factor (from 44 to 72) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

UR - http://www.scopus.com/inward/record.url?scp=84863921199&partnerID=8YFLogxK

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DO - 10.1063/1.4734380

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SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023902

ER -

Microdome InGaN-based multiple quantum well solar cells

Abstract

ASJC Scopus subject areas

UN SDGs

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