Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate

Martin Velazquez-Rizo; Mohammed A. Najmi; Daisuke Iida; Pavel Kirilenko; Kazuhiro Ohkawa

doi:10.35848/1882-0786/ac6c1a

Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO₄(0001) substrate

Martin Velazquez-Rizo, Mohammed A. Najmi, Daisuke Iida, Pavel Kirilenko, Kazuhiro Ohkawa

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Abstract

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.

Original language	English (US)
Article number	065501
Journal	APPLIED PHYSICS EXPRESS
Volume	15
Issue number	6
DOIs	https://doi.org/10.35848/1882-0786/ac6c1a
State	Published - Jun 2022

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate",

abstract = "We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.",

author = "Martin Velazquez-Rizo and Najmi, {Mohammed A.} and Daisuke Iida and Pavel Kirilenko and Kazuhiro Ohkawa",

note = "Funding Information: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). Publisher Copyright: {\textcopyright} 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",

year = "2022",

month = jun,

doi = "10.35848/1882-0786/ac6c1a",

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T1 - Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate

AU - Velazquez-Rizo, Martin

AU - Najmi, Mohammed A.

AU - Iida, Daisuke

AU - Kirilenko, Pavel

AU - Ohkawa, Kazuhiro

N1 - Funding Information: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01). Publisher Copyright: © 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.

PY - 2022/6

Y1 - 2022/6

N2 - We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.

AB - We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.

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DO - 10.35848/1882-0786/ac6c1a

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ER -

Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO₄(0001) substrate

Abstract

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