Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate

Martin Velazquez-Rizo, Mohammed A. Najmi, Daisuke Iida, Pavel Kirilenko, Kazuhiro Ohkawa

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14 Scopus citations

Abstract

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.

Original languageEnglish (US)
Article number065501
JournalAPPLIED PHYSICS EXPRESS
Volume15
Issue number6
DOIs
StatePublished - Jun 2022

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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