Microstructure of interfaces in heterosystems

A. L. Vasiliev; V. V. Roddatis; M. Yu Presnyakov; A. S. Orekhov; S. Lopatin; V. I. Bondarenko; M. V. Koval'chuk

doi:10.1134/S199507801303021X

Microstructure of interfaces in heterosystems

A. L. Vasiliev, V. V. Roddatis, M. Yu Presnyakov, A. S. Orekhov, S. Lopatin, V. I. Bondarenko, M. V. Koval'chuk

Research output: Contribution to journal › Article › peer-review

Abstract

The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O₃/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

Original language	English (US)
Pages (from-to)	317-327
Number of pages	11
Journal	Nanotechnologies in Russia
Volume	8
Issue number	5-6
DOIs	https://doi.org/10.1134/S199507801303021X
State	Published - May 2013
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
General Engineering

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title = "Microstructure of interfaces in heterosystems",

abstract = "The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.",

author = "Vasiliev, {A. L.} and Roddatis, {V. V.} and Presnyakov, {M. Yu} and Orekhov, {A. S.} and S. Lopatin and Bondarenko, {V. I.} and Koval'chuk, {M. V.}",

year = "2013",

month = may,

doi = "10.1134/S199507801303021X",

language = "English (US)",

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T1 - Microstructure of interfaces in heterosystems

AU - Vasiliev, A. L.

AU - Roddatis, V. V.

AU - Presnyakov, M. Yu

AU - Orekhov, A. S.

AU - Lopatin, S.

AU - Bondarenko, V. I.

AU - Koval'chuk, M. V.

PY - 2013/5

Y1 - 2013/5

N2 - The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

AB - The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

UR - http://www.scopus.com/inward/record.url?scp=84879703760&partnerID=8YFLogxK

U2 - 10.1134/S199507801303021X

DO - 10.1134/S199507801303021X

M3 - Article

AN - SCOPUS:84879703760

SN - 1995-0780

VL - 8

SP - 317

EP - 327

JO - Nanotechnologies in Russia

JF - Nanotechnologies in Russia

IS - 5-6

ER -

Microstructure of interfaces in heterosystems

Abstract

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