Microstructure of interfaces in heterosystems

A. L. Vasiliev, V. V. Roddatis, M. Yu Presnyakov, A. S. Orekhov, S. Lopatin, V. I. Bondarenko, M. V. Koval'chuk

    Research output: Contribution to journalArticlepeer-review


    The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

    Original languageEnglish (US)
    Pages (from-to)317-327
    Number of pages11
    JournalNanotechnologies in Russia
    Issue number5-6
    StatePublished - May 2013

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Engineering(all)


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