Midinfrared pump-probe reflection spectroscopy of the coupled phonon-plasmon mode in GaN

Masaya Nagai; Kazuhiro Ohkawa; Makoto Kuwata-Gonokami

doi:10.1063/1.1494460

Midinfrared pump-probe reflection spectroscopy of the coupled phonon-plasmon mode in GaN

Masaya Nagai, Kazuhiro Ohkawa, Makoto Kuwata-Gonokami

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Strong photoinduced reflectivity change in the midinfrared region in GaN is observed by femtosecond pump-probe measurements. By comparing the results of simultaneous emission and reflectivity measurements, we show that midinfrared reflectivity spectra are governed by coupled phonon-plasmon modes and spatial inhomogeneity of carrier density. Even when the plasma frequency lies in the far infrared region at low carrier density of 10¹⁸cm⁻³, the strong plasmon-phonon coupling drives the position of upper phonon-plasmon mode to midinfrared region, allowing us to investigate dynamics of photogenerated free carriers in GaN-based materials by midinfrared reflectivity measurements.

Original language	English (US)
Pages (from-to)	484-486
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	3
DOIs	https://doi.org/10.1063/1.1494460
State	Published - Jul 15 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1494460

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title = "Midinfrared pump-probe reflection spectroscopy of the coupled phonon-plasmon mode in GaN",

abstract = "Strong photoinduced reflectivity change in the midinfrared region in GaN is observed by femtosecond pump-probe measurements. By comparing the results of simultaneous emission and reflectivity measurements, we show that midinfrared reflectivity spectra are governed by coupled phonon-plasmon modes and spatial inhomogeneity of carrier density. Even when the plasma frequency lies in the far infrared region at low carrier density of 1018cm−3, the strong plasmon-phonon coupling drives the position of upper phonon-plasmon mode to midinfrared region, allowing us to investigate dynamics of photogenerated free carriers in GaN-based materials by midinfrared reflectivity measurements.",

author = "Masaya Nagai and Kazuhiro Ohkawa and Makoto Kuwata-Gonokami",

year = "2002",

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AU - Nagai, Masaya

AU - Ohkawa, Kazuhiro

AU - Kuwata-Gonokami, Makoto

PY - 2002/7/15

Y1 - 2002/7/15

N2 - Strong photoinduced reflectivity change in the midinfrared region in GaN is observed by femtosecond pump-probe measurements. By comparing the results of simultaneous emission and reflectivity measurements, we show that midinfrared reflectivity spectra are governed by coupled phonon-plasmon modes and spatial inhomogeneity of carrier density. Even when the plasma frequency lies in the far infrared region at low carrier density of 1018cm−3, the strong plasmon-phonon coupling drives the position of upper phonon-plasmon mode to midinfrared region, allowing us to investigate dynamics of photogenerated free carriers in GaN-based materials by midinfrared reflectivity measurements.

AB - Strong photoinduced reflectivity change in the midinfrared region in GaN is observed by femtosecond pump-probe measurements. By comparing the results of simultaneous emission and reflectivity measurements, we show that midinfrared reflectivity spectra are governed by coupled phonon-plasmon modes and spatial inhomogeneity of carrier density. Even when the plasma frequency lies in the far infrared region at low carrier density of 1018cm−3, the strong plasmon-phonon coupling drives the position of upper phonon-plasmon mode to midinfrared region, allowing us to investigate dynamics of photogenerated free carriers in GaN-based materials by midinfrared reflectivity measurements.

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EP - 486

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Midinfrared pump-probe reflection spectroscopy of the coupled phonon-plasmon mode in GaN

Abstract

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