Migration enhanced epitaxy of CdSe islands on ZnSe and their optical and structural characterization

K. Leonardi*, K. Ohkawa, D. Hommel, H. Selke, F. Gindele, U. Woggon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Formation of self-assembling CdSe islands on ZnSe has been achieved using Migration Enhanced Epitaxy (MEE). Atomic Force Microscopy (AFM) images of uncapped samples show spherical islands with a diameter-to-height ratio of 4:1, which is not yet an unambiguous proof for CdSe quantum-dots. Transmission Electron Microscopy (TEM) images from samples with a ZnSe caplayer show an interrupted Quantum Well (QW) with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. Compared to bulk CdSe, the Photoluminescence (PL) peak is blue-shifted by about 0.5 eV. PL Excitation (PLE) experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn1-xCdxSe with a composition gradient. Temperature dependence of the integrated PL-intensity exhibits thermal quenching with an activation energy of about 100 meV. The red-shift of peak-energy with temperature is considerably larger than the decrease of the bandgap of bulk CdSe.

Original languageEnglish (US)
Pages (from-to)701-705
Number of pages5
JournalMicroelectronic Engineering
StatePublished - Aug 1 1998
Externally publishedYes


  • AFM
  • II-VI semiconductors
  • MBE
  • PL
  • Quantum dots
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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