@inproceedings{515bef3cc1814971b9f87e966be86beb,
title = "Misfit dislocations in green-emitting InGaN/GaN quantum well structures",
abstract = "Misfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).",
author = "Costa, {P. M.F.J.} and R. Datta and Kappers, {M. J.} and Vickers, {M. E.} and Humphreys, {C. J.}",
year = "2006",
language = "English (US)",
isbn = "1558998462",
series = "Materials Research Society Symposium Proceedings",
pages = "639--643",
booktitle = "Materials Research Society Symposium Proceedings",
note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",
}