Misfit dislocations in green-emitting InGaN/GaN quantum well structures

P. M.F.J. Costa*, R. Datta, M. J. Kappers, M. E. Vickers, C. J. Humphreys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations


Misfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages5
StatePublished - 2006
Externally publishedYes
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Misfit dislocations in green-emitting InGaN/GaN quantum well structures'. Together they form a unique fingerprint.

Cite this