Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Alec M. Fischer; Zhihao Wu; Kewei Sun; Qiyuan Wei; Yu Huang; Ryota Senda; Daisuke Iida; Motoaki Iwaya; Hiroshi Amano; Fernando A. Ponce

doi:10.1143/APEX.2.041002

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Alec M. Fischer, Zhihao Wu, Kewei Sun, Qiyuan Wei, Yu Huang, Ryota Senda, Daisuke Iida, Motoaki Iwaya, Hiroshi Amano, Fernando A. Ponce

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported. © 2009 The Japan Society of Applied Physics.

Original language	English (US)
Pages (from-to)	0410021-0410023
Number of pages	3
Journal	APPLIED PHYSICS EXPRESS
Volume	2
Issue number	4
DOIs	https://doi.org/10.1143/APEX.2.041002
State	Published - Apr 1 2009
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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title = "Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN",

abstract = "InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported. {\textcopyright} 2009 The Japan Society of Applied Physics.",

author = "Fischer, {Alec M.} and Zhihao Wu and Kewei Sun and Qiyuan Wei and Yu Huang and Ryota Senda and Daisuke Iida and Motoaki Iwaya and Hiroshi Amano and Ponce, {Fernando A.}",

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T1 - Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

AU - Fischer, Alec M.

AU - Wu, Zhihao

AU - Sun, Kewei

AU - Wei, Qiyuan

AU - Huang, Yu

AU - Senda, Ryota

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Amano, Hiroshi

AU - Ponce, Fernando A.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2009/4/1

Y1 - 2009/4/1

N2 - InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported. © 2009 The Japan Society of Applied Physics.

AB - InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported. © 2009 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/APEX.2.041002

UR - http://www.scopus.com/inward/record.url?scp=64749095963&partnerID=8YFLogxK

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DO - 10.1143/APEX.2.041002

M3 - Article

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EP - 410023

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 4

ER -

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

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