Rate-equation based numerical model for the analysis of two-section InAs/InP quantum-dash tunable laser is developed. The model takes into account quasi-zero dimensional density of states of dashes in the linear optical gain formulation besides incorporating both homogeneous and inhomogeneous broadening of the active region. The simulation results show a broad tunability of ~22 nm from longer 2000 µm device with 700 µm absorber length compared to 1000 µm device with 300 µm absorber length, which exhibited ~15 nm tuning window, in the L-band. Moreover, a sharp turn-on behavior is also observed, which is found to be in good agreement with our recent experimental results. Such devices and their comprehensive analysis would enable design optimization of two-section quantum-dash lasers, which are promising candidates as monolithic tunable lasers for next-generation access networks.
|Original language||English (US)|
|Title of host publication||Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology|
|Publisher||SCITEPRESS - Science and Technology Publications|
|Number of pages||5|
|State||Published - 2019|