Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces

Wolfgang Windl*, Tao Liang, Sergei Lopatin, Gerd Duscher

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    12 Citations (SciVal)


    We have shown that oxidation of germanium-implanted Si can produce a pile-up of Ge in front of the oxidation front and produce an atomically-sharp interface. In this paper, we examine band-structure and processing of such an interface. Based on ab-initio calculations, the band structure of the sharp interface seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiC2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys. The model explains the formation of the sharp interface due to the repulsive interaction between O and Ge. Furthermore, inclusion of Ge into the oxide is predicted for higher Ge concentrations, in agreement with experiment.

    Original languageEnglish (US)
    Pages (from-to)156-161
    Number of pages6
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Issue numberSPEC. ISS.
    StatePublished - Dec 30 2004


    • Ab-initio calculations
    • Ge/SiO interfaces
    • Oxidation

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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