Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study

Akira Hirako*, Kazuhide Kusakabe, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

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Material Science

Chemical Engineering

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