Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level

C. L. Hsin; J. H. He; L. J. Chen

doi:10.1063/1.2172219

Modulation of photoemission spectra of In ₂O ₃ nanowires by the variation in Zn doping level

C. L. Hsin, J. H. He, L. J. Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

42 Scopus citations

Abstract

The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

Original language	English (US)
Article number	063111
Journal	Applied Physics Letters
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.2172219
State	Published - Feb 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{0aa54b1a8373483882d2cebcbbdd58da,

title = "Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level",

abstract = "The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.",

author = "Hsin, {C. L.} and He, {J. H.} and Chen, {L. J.}",

note = "Funding Information: The research is supported by the Republic of China National Science Council Grant No. NSC 94-2115-E-007-018 and Ministry of Education Grant No. 91-E-FA04-1-4.",

year = "2006",

month = feb,

doi = "10.1063/1.2172219",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

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T1 - Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level

AU - Hsin, C. L.

AU - He, J. H.

AU - Chen, L. J.

N1 - Funding Information: The research is supported by the Republic of China National Science Council Grant No. NSC 94-2115-E-007-018 and Ministry of Education Grant No. 91-E-FA04-1-4.

PY - 2006/2

Y1 - 2006/2

N2 - The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

AB - The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=32444440591&partnerID=8YFLogxK

U2 - 10.1063/1.2172219

DO - 10.1063/1.2172219

M3 - Review article

AN - SCOPUS:32444440591

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063111

ER -

Modulation of photoemission spectra of In ₂O ₃ nanowires by the variation in Zn doping level

Abstract

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