Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films

C. H. Sim; V. Ko; K. L. Teo; Z. B. Guo; T. Liew; T. C. Chong

doi:10.1016/j.jcrysgro.2007.08.010

Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films

C. H. Sim, V. Ko, K. L. Teo^*, Z. B. Guo, T. Liew, T. C. Chong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co₂MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co₂MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals.

Original language	English (US)
Pages (from-to)	392-397
Number of pages	6
Journal	Journal of Crystal Growth
Volume	308
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.08.010
State	Published - Oct 15 2007
Externally published	Yes

Keywords

A1. Reflection high-energy electron diffraction
A3. Molecular beam epitaxy
B1. Heusler alloy
B3. Spintronics

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/j.jcrysgro.2007.08.010

Cite this

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title = "Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films",

abstract = "We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals.",

keywords = "A1. Reflection high-energy electron diffraction, A3. Molecular beam epitaxy, B1. Heusler alloy, B3. Spintronics",

author = "Sim, {C. H.} and V. Ko and Teo, {K. L.} and Guo, {Z. B.} and T. Liew and Chong, {T. C.}",

year = "2007",

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doi = "10.1016/j.jcrysgro.2007.08.010",

language = "English (US)",

volume = "308",

pages = "392--397",

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issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2",

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TY - JOUR

T1 - Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films

AU - Sim, C. H.

AU - Ko, V.

AU - Teo, K. L.

AU - Guo, Z. B.

AU - Liew, T.

AU - Chong, T. C.

PY - 2007/10/15

Y1 - 2007/10/15

N2 - We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals.

AB - We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals.

KW - A1. Reflection high-energy electron diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Heusler alloy

KW - B3. Spintronics

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U2 - 10.1016/j.jcrysgro.2007.08.010

DO - 10.1016/j.jcrysgro.2007.08.010

M3 - Article

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SN - 0022-0248

VL - 308

SP - 392

EP - 397

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films

Abstract

Keywords

ASJC Scopus subject areas

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