Abstract
Undoped, p- and n-type ZnSe homoepitaxial layers have been successfully grown by molecular beam epitaxy on dry-etched substrates. ZnSe substrates were etched with a BCl3 plasma to eliminate polishing damage. The full width at half maximum of an X-ray rocking curve for a homoepitaxial layer has reached 21 arc sec. N-doped ZnSe homoepitaxial layers grown with the active-nitrogen doping technique have shown p-type conduction which is the evidence of p-type conduction in ZnSe. The n-type homoepitaxial layers have been grown with Cl doping. The Cl-doped homoepitaxial layers have shown high Hall mobilities relative to heteroepitaxial layers. These undoped, N-doped and Cl-doped layers have exhibited strain-free photoluminescence properties; free exciton emission, neutral acceptor-bound exciton emission and neutral donor-bound exciton emission showed a single peaks at 2.804, 2.7931 and 2.7980 eV, respectively.
Original language | English (US) |
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Pages (from-to) | 375-384 |
Number of pages | 10 |
Journal | Journal of Crystal Growth |
Volume | 117 |
Issue number | 1-4 |
DOIs | |
State | Published - Feb 2 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry