TY - PAT
T1 - Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting
AU - Ng, Tien Khee
AU - Zhao, Chao
AU - Priante, Davide
AU - Ooi, Boon S.
AU - Hussein, Mohamed Ebaid Abdrabou
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2018/2/1
Y1 - 2018/2/1
N2 - Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.
AB - Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.
UR - http://hdl.handle.net/10754/627158
UR - http://www.google.com/patents/WO2018020422A1
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2018020422A1&KC=A1&FT=D
M3 - Patent
M1 - WO 2018020422 A1
ER -
