Molecular-weight-dependent mobilities in regioregular poly(3-hexyl- thiophene) diodes

Chiatzun Goh; R. Joseph Kline; Michael D. McGehee; Ekaterina N. Kadnikova; Jean M.J. Fŕchet

doi:10.1063/1.1891301

Molecular-weight-dependent mobilities in regioregular poly(3-hexyl- thiophene) diodes

Chiatzun Goh^*, R. Joseph Kline, Michael D. McGehee, Ekaterina N. Kadnikova, Jean M.J. Fŕchet

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

410 Scopus citations

Abstract

We have investigated the transport properties in the direction perpendicular to the substrate of regioregular poly(3-hexyl-thiophene) of different molecular weights (MW) in a diode geometry. In these devices, which exhibit space-charge-limited behavior, we find that the mobility values at room temperature increase from 1.33× 10-5 cm2 V s to 3.30× 10-4 cm2 V s as the MW is increased from 2.9 to 31.1 kgmol. The mobility is found to be field independent for high MW films, but field dependent for the low MW films. The current-voltage characteristics of the diodes are also studied as a function of temperature from 160 K to 300 K. The activation energy for carrier transport, extracted from the Arrhenius plot, is found to decrease gradually from 143 meV to 126 meV as the MW is increased.

Original language	English (US)
Article number	122110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	12
DOIs	https://doi.org/10.1063/1.1891301
State	Published - Mar 21 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1891301

Cite this

@article{73329d9f7c364525b67b28be041b2732,

title = "Molecular-weight-dependent mobilities in regioregular poly(3-hexyl- thiophene) diodes",

abstract = "We have investigated the transport properties in the direction perpendicular to the substrate of regioregular poly(3-hexyl-thiophene) of different molecular weights (MW) in a diode geometry. In these devices, which exhibit space-charge-limited behavior, we find that the mobility values at room temperature increase from 1.33× 10-5 cm2 V s to 3.30× 10-4 cm2 V s as the MW is increased from 2.9 to 31.1 kgmol. The mobility is found to be field independent for high MW films, but field dependent for the low MW films. The current-voltage characteristics of the diodes are also studied as a function of temperature from 160 K to 300 K. The activation energy for carrier transport, extracted from the Arrhenius plot, is found to decrease gradually from 143 meV to 126 meV as the MW is increased.",

author = "Chiatzun Goh and Kline, {R. Joseph} and McGehee, {Michael D.} and Kadnikova, {Ekaterina N.} and F{\'r}chet, {Jean M.J.}",

note = "Funding Information: The authors thank A. Salleo from PARC for help with and access to their probe station setup. This work was supported in part by a Kodak Research Fellowship, the Center on Polymer Interfaces and Macromolecular Assemblies at Stanford University, and the Air Force office of Scientific Research and the Department of Energy, Basic Energy Sciences. ",

year = "2005",

month = mar,

day = "21",

doi = "10.1063/1.1891301",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "12",

}

TY - JOUR

T1 - Molecular-weight-dependent mobilities in regioregular poly(3-hexyl- thiophene) diodes

AU - Goh, Chiatzun

AU - Kline, R. Joseph

AU - McGehee, Michael D.

AU - Kadnikova, Ekaterina N.

AU - Fŕchet, Jean M.J.

N1 - Funding Information: The authors thank A. Salleo from PARC for help with and access to their probe station setup. This work was supported in part by a Kodak Research Fellowship, the Center on Polymer Interfaces and Macromolecular Assemblies at Stanford University, and the Air Force office of Scientific Research and the Department of Energy, Basic Energy Sciences.

PY - 2005/3/21

Y1 - 2005/3/21

N2 - We have investigated the transport properties in the direction perpendicular to the substrate of regioregular poly(3-hexyl-thiophene) of different molecular weights (MW) in a diode geometry. In these devices, which exhibit space-charge-limited behavior, we find that the mobility values at room temperature increase from 1.33× 10-5 cm2 V s to 3.30× 10-4 cm2 V s as the MW is increased from 2.9 to 31.1 kgmol. The mobility is found to be field independent for high MW films, but field dependent for the low MW films. The current-voltage characteristics of the diodes are also studied as a function of temperature from 160 K to 300 K. The activation energy for carrier transport, extracted from the Arrhenius plot, is found to decrease gradually from 143 meV to 126 meV as the MW is increased.

AB - We have investigated the transport properties in the direction perpendicular to the substrate of regioregular poly(3-hexyl-thiophene) of different molecular weights (MW) in a diode geometry. In these devices, which exhibit space-charge-limited behavior, we find that the mobility values at room temperature increase from 1.33× 10-5 cm2 V s to 3.30× 10-4 cm2 V s as the MW is increased from 2.9 to 31.1 kgmol. The mobility is found to be field independent for high MW films, but field dependent for the low MW films. The current-voltage characteristics of the diodes are also studied as a function of temperature from 160 K to 300 K. The activation energy for carrier transport, extracted from the Arrhenius plot, is found to decrease gradually from 143 meV to 126 meV as the MW is increased.

UR - http://www.scopus.com/inward/record.url?scp=17944374329&partnerID=8YFLogxK

U2 - 10.1063/1.1891301

DO - 10.1063/1.1891301

M3 - Article

AN - SCOPUS:17944374329

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122110

ER -

Molecular-weight-dependent mobilities in regioregular poly(3-hexyl- thiophene) diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this