Abstract
We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.
Original language | English (US) |
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Pages (from-to) | 8317-8322 |
Number of pages | 6 |
Journal | ACS Nano |
Volume | 8 |
Issue number | 8 |
DOIs | |
State | Published - Jul 25 2014 |
ASJC Scopus subject areas
- General Physics and Astronomy
- General Materials Science
- General Engineering