Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

Yung-Huang Chang; Wenjing Zhang; Yihan Zhu; Yu Han; Jiang Pu; Jan-Kai Chang; Wei-Ting Hsu; Jing-Kai Huang; Chang-Lung Hsu; Ming-Hui Chiu; Taishi Takenobu; Henan Li; Chih-I Wu; Wen-Hao Chang; Andrew Thye Shen Wee; Lain-Jong Li

doi:10.1021/nn503287m

Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

Yung-Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan-Kai Chang, Wei-Ting Hsu, Jing-Kai Huang, Chang-Lung Hsu, Ming-Hui Chiu, Taishi Takenobu, Henan Li, Chih-I Wu, Wen-Hao Chang, Andrew Thye Shen Wee, Lain-Jong Li

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Abstract

Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (

Original language	English (US)
Pages (from-to)	8582-8590
Number of pages	9
Journal	ACS Nano
Volume	8
Issue number	8
DOIs	https://doi.org/10.1021/nn503287m
State	Published - Aug 7 2014

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https://repository.kaust.edu.sa/bitstream/10754/338571/1/Monolayer%20MoSe2%20Grown%20by%20Chemical%20Vapor%20deposition%20for%20Fast%20Photodetection.pdf

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@article{78ef30e63ebd4238b8041f06f21506cb,

title = "Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection",

abstract = "Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (",

author = "Yung-Huang Chang and Wenjing Zhang and Yihan Zhu and Yu Han and Jiang Pu and Jan-Kai Chang and Wei-Ting Hsu and Jing-Kai Huang and Chang-Lung Hsu and Ming-Hui Chiu and Taishi Takenobu and Henan Li and Chih-I Wu and Wen-Hao Chang and Wee, {Andrew Thye Shen} and Lain-Jong Li",

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year = "2014",

month = aug,

day = "7",

doi = "10.1021/nn503287m",

language = "English (US)",

volume = "8",

pages = "8582--8590",

journal = "ACS Nano",

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TY - JOUR

T1 - Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

AU - Chang, Yung-Huang

AU - Zhang, Wenjing

AU - Zhu, Yihan

AU - Han, Yu

AU - Pu, Jiang

AU - Chang, Jan-Kai

AU - Hsu, Wei-Ting

AU - Huang, Jing-Kai

AU - Hsu, Chang-Lung

AU - Chiu, Ming-Hui

AU - Takenobu, Taishi

AU - Li, Henan

AU - Wu, Chih-I

AU - Chang, Wen-Hao

AU - Wee, Andrew Thye Shen

AU - Li, Lain-Jong

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/8/7

Y1 - 2014/8/7

N2 - Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (

AB - Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (

UR - http://hdl.handle.net/10754/338571

UR - http://pubs.acs.org/doi/abs/10.1021/nn503287m

UR - http://www.scopus.com/inward/record.url?scp=84906690117&partnerID=8YFLogxK

U2 - 10.1021/nn503287m

DO - 10.1021/nn503287m

M3 - Article

SN - 1936-0851

VL - 8

SP - 8582

EP - 8590

JO - ACS Nano

JF - ACS Nano

IS - 8

ER -

Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

Abstract

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