Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

Y. Wang; H. S. Djie; B. S. Ooi; J. C.M. Hwang; X. M. Fang; Y. Wu; J. M. Fastenau; W. K. Liu; G. T. Dang; W. H. Chang

doi:10.1134/s11490-008-4007-1

Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

Y. Wang^*, H. S. Djie, B. S. Ooi, J. C.M. Hwang, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm^-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.

Original language	English (US)
Pages (from-to)	400-402
Number of pages	3
Journal	Laser Physics
Volume	18
Issue number	4
DOIs	https://doi.org/10.1134/s11490-008-4007-1
State	Published - Apr 2008
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Instrumentation
Condensed Matter Physics
Industrial and Manufacturing Engineering

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10.1134/s11490-008-4007-1

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title = "Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing",

abstract = "The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.",

author = "Y. Wang and Djie, {H. S.} and Ooi, {B. S.} and Hwang, {J. C.M.} and Fang, {X. M.} and Y. Wu and Fastenau, {J. M.} and Liu, {W. K.} and Dang, {G. T.} and Chang, {W. H.}",

year = "2008",

month = apr,

doi = "10.1134/s11490-008-4007-1",

language = "English (US)",

volume = "18",

pages = "400--402",

journal = "Laser Physics",

issn = "1054-660X",

publisher = "Institute of Physics Publishing",

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TY - JOUR

T1 - Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, B. S.

AU - Hwang, J. C.M.

AU - Fang, X. M.

AU - Wu, Y.

AU - Fastenau, J. M.

AU - Liu, W. K.

AU - Dang, G. T.

AU - Chang, W. H.

PY - 2008/4

Y1 - 2008/4

N2 - The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.

AB - The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.

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DO - 10.1134/s11490-008-4007-1

M3 - Article

AN - SCOPUS:42349115593

SN - 1054-660X

VL - 18

SP - 400

EP - 402

JO - Laser Physics

JF - Laser Physics

IS - 4

ER -

Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

Abstract

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