Abstract
We report the morphological evolution of a-plane GaN thin films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The surface flatness is improved under optimized growth conditions which are different from those of c-plane epitaxy. The peak-to-valley height of surface roughness is reduced from 4 to 0.8 μm when GaN is grown at 1120°C on a 40-nm-thick low-temperature GaN (LT-GaN) buffer layer, as well as at 1150°C on a 20-nm-thick LT-GaN. These samples show their highest electron mobility of 220 cm2/(V s) at an electron concentration of 1.1 × 10 18 cm-3 at room temperature.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7931-7933 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 9 2005 |
| Externally published | Yes |
Keywords
- Electrical property
- GaN
- MOVPE
- Nonpolar plane
- Surface morphology
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy