Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Material Science

• Sapphire 100%
• Vapor Phase Epitaxy 100%
• Morphology 100%
• Epitaxy 50%
• Surface Roughness 50%
• Buffer Layer 50%
• Thin Films 50%
• Electron Mobility 50%

Physics

• Metalorganic Vapor Phase Epitaxy 100%
• Thin Films 50%
• Atmospherics 50%
• Surface Roughness 50%
• Epitaxy 50%
• Room Temperature 50%
• Electron Mobility 50%
• Flatness 50%

Keyphrases

• Peak-to-valley 50%
• Surface Flatness 50%