Controlled synthesis of one-dimensional materials, such as nanowires and nanobelts, is of vital importance for achieving the desired properties and fabricating functional devices. We report a systematic investigation of the vapor transport growth of one-dimensional SnO2 nanostructures, aiming to achieve precise morphology control. SnO2 nanowires are obtained when SnO2 mixed with graphite is used as the source material; adding TiO2 into the source reliably leads to the formation of nanobelts. Ti-induced modification of crystal surface energy is proposed to be the origin of the morphology change. In addition, control of the lateral dimensions of both SnO2 nanowires (from ∼15 to ∼115 nm in diameter) and nanobelts (from ∼30 nm to ∼2 νm in width) is achieved by adjusting the growth conditions. The physical properties of SnO2 nanowires and nanobelts are further characterized and compared using room temperature photoluminescence, resonant Raman scattering, and field emission measurements.
|Original language||English (US)|
|State||Published - May 20 2009|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering