@inproceedings{76309866eaba4864b6ca968eeed49848,
title = "MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer",
abstract = "In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.",
keywords = "Al2O3, atomic layer deposition, Charge trapping memory, HfO2, MOS, retention time, ZnO",
author = "Nazek El-Atab and Ammar Nayfeh and Turgut, {Berk Berkan} and Okyay, {Ali K.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",
year = "2015",
doi = "10.1109/NANO.2015.7388722",
language = "English (US)",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "766--768",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",
}