@inproceedings{9762aebbbd914015b6a4dcd38c476c6a,
title = "MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer",
abstract = "In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO2 nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 5 V and a 3 V Vt shift is obtained at low operating voltage of 6/-6 V. In addition, the calculated retention characteristic of the charges in the Si-NPs memory (>10 years) makes such memory structure promising for applications in non-volatile memory devices.",
keywords = "Al2O3-TiO nanolaminates, atomic layer deposition, Charge trapping memory, HfO2, MOS, retention time",
author = "Nazek El-Atab and Ammar Nayfeh and Turgut, {Berk Berkan} and Okyay, {Ali K.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",
year = "2015",
doi = "10.1109/NANO.2015.7388692",
language = "English (US)",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "663--665",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",
}